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公司地址:江苏省徐州市丰县丰县开发区智能制造产业园B2栋
ProbeTypeTSVVerticalProbeMaterialNiAlloyProbes(Max.)Over1,000pinsTestFrequencyOver100MHzMinPadPitch>40μmRecommendedO/D2mil(Max.4mil)Planarity<5μmAlignment±3μmContactForce(gf/mil)2.5g/mil(Standard)MaxCurrent800mA
ProbeTypeMEMSProbeVerticalProbes(Max.)3,000pinsPadpitch(Min.)18um(In-line)9um(Staggered4Layer)Leakagecurrent<1pAPlanarity<8umAlignment±3umMaxCurrent800mATestFrequencyUp to400mhzMaxOverdrive2mil(recommended)Max4milGramforce1.2g/mil(standard)
ProbeTypeVerticalProbeMaterialNiAlloyMin.PadPitch40μmRecommendedO/D2mil(Max.4mil)Planarity<5μmAlignment±3μmContactForce(gf/mil)2.5g/mil(Standard)LeakageCurrent<10fA/V(@10V,10sec)MaxCurrent800mAContactResistance<3Ω
ProbeTypeVerticalProbeMaterialFilmbumptype/NiAlloyMin.PadPitch60μmRecommendedO/D2mil(Max.3mil)Planarity<5μmAlignment±3μmContactForce(gf/mil)1.5g/mil(Standard)MaxCurrent800mAFrequency>3GHzContactResistance<3ΩArrayAvailableMultipara
ProbeTypeVerticalProbeMaterialNiAlloyMin.PadPitch>40μmRecommendedO/D2mil(Max.3mil)Planarity<5μmAlignment±3μmContactForce(gf/mil)2.5g/mil(Standard)MaxCurrent800mAFrequency>100MHzLeakagecurrent1pA@10VContactResistance<3Ω
ProbeTypeVerticalProbeMaterialNiAlloyMin.PadPitch40μmRecommendedO/D2mil(Max.4mil)Planarity<8μmAlignment±3μmContactForce(gf/mil)2.5g/mil(Standard)MaxCurrent800mALeakagecurrent1pA@10VContactForce(gf/mil)2.5g/mil(Standard)Frequency>100MHzArrayAvailableMultipara
ProbeTypeCantileverMaterialWorReW,BeCu,P7Probes(Max)Upto3,000pinsAlignment±3μmPlanarity<10um(Standard)PlanaritymayvarydependingontheArraysizeMaxOverdrive4milGramforce2.5g/mil(standard) Leakage <1pAMaxCurrent1.0ATestFrequencyOver50MhzArrayAvailableMultipara
ProbeTypeCantileverProbeMaterialWorReWMin.PadPitch60μmRecommendedO/D2mil(Max.4mil)Planarity<5μmAlignment±3μmContactForce(gf/mil)2.5g/mil(Standard)LeakageCurrent<10fA/V(@10V,10sec)MaxCurrent1AContactResistance<3Ω
ProbeTypeCantileverMaterialWorReW,BeCu,P7Probes(Max.)Upto3,000pinsAlignment±3μmPlanarity<10um(Standard)PlanaritymayvarydependingontheArraysizeMaxOverdrive4milGramforce2.5g/mil(standard) Leakage <1pAMaxCurrent1.0ATestFrequencyOver50MhzArrayAvailableMultipara
TypeCantileverMaterialBeCuorNiAlloyAlignment±5μmPlanarity<10μmMaxOverdrive1mmLifetimeOver100,000TouchdownMinPitch60μmGramforce6g/mil(standard)AvailableadjustContactorchangeEasilyreplacecontactorswithoutdamagingFPCBorfemaleconnectorsAdvantagesReducedowntime,LonglifetimeNodamageonthePad,Increaseproductivity
ClassificationPengliZEDAONProductWeight(Materials)8.0Kg(MgAlloy)ProbeBlockSee-SawTypeMechanismTheContactorpressureandvibrationVibrationandcylinderpressurecanbereduceabout70%comparetoexistingproduct.PalletCapacityWecanload30%moreinthesamespacethanexistingmodel.Existingtype10PalletsonlyZEDAONtype13~14Palletsavailable
TypeBladeMaterialBeCuAlignment±3μmPlanarity<10μmMaxOverdrive6milRepairPintoPinreplacementavailableOthersFollowupthecustomersrequirements
NoPartNameSpecification1BASEPlateDependsonthecustomerspec.2INVARFRAME3MicroManipulatorData4MicroManipulatorGate5Others
FeatureT5581HandlerM6541A,M6741DM6841A,M6862ATestSite64parallel(shared),32,16parallelDevice256,128,64,16MSDRAM256,128,64MDDRSDRAM64,16MEDODRAMOrganizationX32,X16,X8,X4.PackageTSOP-II,u-BGAFrequency100,125,143,166,200MHzTestSocketEn-Plas,HC,POGO
FeatureT5585HandlerM6541ATestSite128parallel(shared)64,32,16parallelDevice256,128,64,16MSDRAM256,128,64MDDRSDRAM64,16MEDODRAMOrganizationX32,X16,X8,X4.PackageTSOP-II,u-BGAFrequency250MHz500Mhz(DDRMode)TestSocketEn-Plas,HC,POGO
FeatureAL.6080/AL6082HandlerM6741A,M6741ADMR5000,MR5400TestSite64,32parallelDeviceDRAM,DDRSDRAMSSRAMOrganizationX16,X8PackageTSOP-II,u-BGA,FBGAFrequency250/500MHzTestSocketPOGO,HC
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江苏省徐州市丰县开发区智能制造产业园B2栋